RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5773DH0-CK0 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Compare
Samsung M471B5773DH0-CK0 2GB vs Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Overall score
Samsung M471B5773DH0-CK0 2GB
Overall score
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5773DH0-CK0 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
35
Around 23% lower latency
Reasons to consider
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Report a bug
Faster reading speed, GB/s
16.8
12.2
Average value in the tests
Faster write speed, GB/s
13.7
7.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5773DH0-CK0 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
35
Read speed, GB/s
12.2
16.8
Write speed, GB/s
7.8
13.7
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1763
3306
Samsung M471B5773DH0-CK0 2GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) PSD34G16002 4GB
A-DATA Technology DDR4 3200 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMR16GX4M2C 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905701-011.A00G 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Samsung M471A5143DB0-CPB 4GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL16G30C15U4WL.M16FE 16GB
Kingston 99U5403-036.A00G 4GB
Kingston 9905701-011.A00G 16GB
Kingston 9905403-061.A00LF 2GB
Samsung M393A2K40BB2-CTD 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Super Talent F24EB8GS 8GB
Kingston 9905458-017.A01LF 4GB
Mushkin MR[A/B]4U320GJJM8G 8GB
Kingston 9965662-016.A00G 16GB
Kllisre 36JSF1G72PZ-1G9K1 8GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-2400C17-8GSXK 8GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-4000C18-8GTZKK 8GB
AMD R5316G1609U2K 8GB
Kingston 9905711-015.A00G 4GB
Report a bug
×
Bug description
Source link