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Samsung M471B5773DH0-CK0 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

Samsung M471B5773DH0-CK0 2GB vs Nanya Technology NT2GC64B8HC0NF-CG 2GB

Overall score
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Overall score
star star star star star
Nanya Technology NT2GC64B8HC0NF-CG 2GB

Nanya Technology NT2GC64B8HC0NF-CG 2GB

Differences Specifications Comments

Differences

Samsung M471B5773DH0-CK0 2GB Reasons to consider
Samsung M471B5773DH0-CK0 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 48
    Around 44% lower latency
  • Faster reading speed, GB/s
    12.2 left arrow 11.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21% higher bandwidth
Nanya Technology NT2GC64B8HC0NF-CG 2GB Reasons to consider
Nanya Technology NT2GC64B8HC0NF-CG 2GB
Report a bug
  • Faster write speed, GB/s
    8.3 left arrow 7.8
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471B5773DH0-CK0 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    27 left arrow 48
  • Read speed, GB/s
    12.2 left arrow 11.6
  • Write speed, GB/s
    7.8 left arrow 8.3
  • Memory bandwidth, mbps
    12800 left arrow 10600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1763 left arrow 1804

Samsung M471B5773DH0-CK0 2GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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