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Samsung M471B5773DH0-CK0 2GB
Corsair CM4B8G1L2666A18S4 8GB

Samsung M471B5773DH0-CK0 2GB vs Corsair CM4B8G1L2666A18S4 8GB

Overall score
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Overall score
star star star star star
Corsair CM4B8G1L2666A18S4 8GB

Corsair CM4B8G1L2666A18S4 8GB

Differences Specifications Comments

Differences

Samsung M471B5773DH0-CK0 2GB Reasons to consider
Samsung M471B5773DH0-CK0 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 32
    Around 16% lower latency
  • Faster reading speed, GB/s
    12.2 left arrow 11.4
    Average value in the tests
Corsair CM4B8G1L2666A18S4 8GB Reasons to consider
Corsair CM4B8G1L2666A18S4 8GB
Report a bug
  • Faster write speed, GB/s
    12.7 left arrow 7.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5773DH0-CK0 2GB
Corsair CM4B8G1L2666A18S4 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 32
  • Read speed, GB/s
    12.2 left arrow 11.4
  • Write speed, GB/s
    7.8 left arrow 12.7
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    1763 left arrow 2804

Samsung M471B5773DH0-CK0 2GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

Corsair CM4B8G1L2666A18S4 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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