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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Samsung M471A5143EB0-CPB 4GB
Compare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Samsung M471A5143EB0-CPB 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
Samsung M471A5143EB0-CPB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
35
Around 37% lower latency
Faster reading speed, GB/s
17.7
13.5
Average value in the tests
Faster write speed, GB/s
12.7
10.3
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
Samsung M471A5143EB0-CPB 4GB
Report a bug
Specifications
Complete list of technical specifications
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Samsung M471A5143EB0-CPB 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
22
35
Read speed, GB/s
17.7
13.5
Write speed, GB/s
12.7
10.3
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3075
2155
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RAM Latency Calculator
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RAM 2
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