RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Samsung M471A5143EB0-CPB 4GB
Compare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Samsung M471A5143EB0-CPB 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
Samsung M471A5143EB0-CPB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
35
Around 37% lower latency
Faster reading speed, GB/s
17.7
13.5
Average value in the tests
Faster write speed, GB/s
12.7
10.3
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
Samsung M471A5143EB0-CPB 4GB
Report a bug
Specifications
Complete list of technical specifications
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Samsung M471A5143EB0-CPB 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
22
35
Read speed, GB/s
17.7
13.5
Write speed, GB/s
12.7
10.3
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3075
2155
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM comparisons
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Samsung M471A5143EB0-CPB 4GB RAM comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173DB0-YK0 4GB
V-GEN D4H8GS24A8 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Corsair CMK8GX4M1Z3600C18 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Samsung M471A5143EB0-CPB 4GB
Kingston 99U5428-040.A00LF 4GB
Corsair CMSX16GX4M2A2666C18 8GB
Kingston 9905471-002.A00LF 2GB
Apacer Technology 78.CAGPP.ARW0B 8GB
Kingston 99U5474-038.A00LF 4GB
Corsair CMR32GX4M4C3000C15 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston KF3000C15D4/8GX 8GB
Strontium EVMT8G1600U86S 8GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905702-184.A00G 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
Kingston 9905469-124.A00LF 4GB
Transcend Information TS2GSH64V1B 16GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905663-021.A00G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CMD32GX4M4A2666C15 8GB
Report a bug
×
Bug description
Source link