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SK Hynix DDR2 800 2G 2GB
Micron Technology AFLD416EH1P 16GB
Compare
SK Hynix DDR2 800 2G 2GB vs Micron Technology AFLD416EH1P 16GB
Overall score
SK Hynix DDR2 800 2G 2GB
Overall score
Micron Technology AFLD416EH1P 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix DDR2 800 2G 2GB
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Faster reading speed, GB/s
2
13.7
Average value in the tests
Reasons to consider
Micron Technology AFLD416EH1P 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
77
Around -175% lower latency
Faster write speed, GB/s
6.9
1,884.0
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix DDR2 800 2G 2GB
Micron Technology AFLD416EH1P 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
28
Read speed, GB/s
2,936.9
13.7
Write speed, GB/s
1,884.0
6.9
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
564
2312
SK Hynix DDR2 800 2G 2GB RAM comparisons
Samsung M378T5663QZ3-CF7 2GB
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Micron Technology AFLD416EH1P 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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