RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M471A5244CB0-CWE 4GB
Compare
SK Hynix HMA451U6AFR8N-TF 4GB vs Samsung M471A5244CB0-CWE 4GB
Overall score
SK Hynix HMA451U6AFR8N-TF 4GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HMA451U6AFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
37
38
Around 3% lower latency
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Faster reading speed, GB/s
15.5
14.7
Average value in the tests
Faster write speed, GB/s
12.0
10.6
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M471A5244CB0-CWE 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
37
38
Read speed, GB/s
14.7
15.5
Write speed, GB/s
10.6
12.0
Memory bandwidth, mbps
17000
25600
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2438
2283
SK Hynix HMA451U6AFR8N-TF 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A5244CB0-CWE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
Neo Forza NMUD480E86-3200 8GB
Samsung M378B5673EH1-CF8 2GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Kingston KVR533D2N4 512MB
SK Hynix HMA82GU6CJR8N-VK 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 99U5711-001.A00G 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMWX8GD3200C16W4 8GB
Kingston KVR16N11/8-SP 8GB
Kingston CBD26D4S9S8ME-8 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Kingston 9905469-124.A00LF 4GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CM4X4GD3000C16K2 4GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-4000C19-16GTZKK 16GB
Samsung M378B5173BH0-CH9 4GB
Kingston LV36D4U1S8HD-8XR 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston ACR26D4U9D8ME-16 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9905316-131.A00LF 1GB
Report a bug
×
Bug description
Source link