SK Hynix HYMP125S64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

SK Hynix HYMP125S64CP8-S6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Overall score
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SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Differences

  • Faster reading speed, GB/s
    4 left arrow 10
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    30 left arrow 68
    Around -127% lower latency
  • Faster write speed, GB/s
    8.5 left arrow 2,013.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HYMP125S64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    68 left arrow 30
  • Read speed, GB/s
    4,402.8 left arrow 10.0
  • Write speed, GB/s
    2,013.5 left arrow 8.5
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    701 left arrow 2234
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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