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Smart Modular SH564128FH8NZQNSCG 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Smart Modular SH564128FH8NZQNSCG 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Smart Modular SH564128FH8NZQNSCG 4GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Smart Modular SH564128FH8NZQNSCG 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
37
Around 24% lower latency
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Faster reading speed, GB/s
16
9.4
Average value in the tests
Faster write speed, GB/s
12.6
5.5
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Smart Modular SH564128FH8NZQNSCG 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
37
Read speed, GB/s
9.4
16.0
Write speed, GB/s
5.5
12.6
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1453
2808
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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