RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-4200C19-4GTZ 4GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs G Skill Intl F4-4200C19-4GTZ 4GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
G Skill Intl F4-4200C19-4GTZ 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
Below the latency in the PassMark tests, ns
63
75
Around 16% lower latency
Faster reading speed, GB/s
3
14.5
Average value in the tests
Reasons to consider
G Skill Intl F4-4200C19-4GTZ 4GB
Report a bug
Faster write speed, GB/s
7.6
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-4200C19-4GTZ 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
75
Read speed, GB/s
3,231.0
14.5
Write speed, GB/s
1,447.3
7.6
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
478
1735
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
G Skill Intl F4-4200C19-4GTZ 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-4200C19-4GTZ 4GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Mushkin 991988 (996988) 4GB
Kingston 9905743-023.A00G 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
Essencore Limited KD48GU88C-26N1600 8GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Kingston 99U5474-010.A00LF 2GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Avant Technology J641GU42J9266ND 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Corsair CMP4GX3M2B1600C8 2GB
Kingston 9905744-023.A00G 16GB
Kingston 99U5403-050.A00LF 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
SK Hynix HYMP125U64CP8-S6 2GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMK16GX4M2Z4000C18 8GB
Report a bug
×
Bug description
Source link