STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

Overall score
star star star star star
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Overall score
star star star star star
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Differences

  • Faster reading speed, GB/s
    3 left arrow 11.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    5300 left arrow 1900
    Around 2.79% higher bandwidth
  • Below the latency in the PassMark tests, ns
    45 left arrow 63
    Around -40% lower latency
  • Faster write speed, GB/s
    8.4 left arrow 1,447.3
    Average value in the tests

Specifications

Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    63 left arrow 45
  • Read speed, GB/s
    3,231.0 left arrow 11.7
  • Write speed, GB/s
    1,447.3 left arrow 8.4
  • Memory bandwidth, mbps
    5300 left arrow 1900
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow no data
  • Ranking PassMark (The more the better)
    478 left arrow 2387
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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