RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Micron Technology 4ATF51264HZ-2G3B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
Faster reading speed, GB/s
3
14.8
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264HZ-2G3B1 4GB
Report a bug
Below the latency in the PassMark tests, ns
35
63
Around -80% lower latency
Faster write speed, GB/s
11.2
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
35
Read speed, GB/s
3,231.0
14.8
Write speed, GB/s
1,447.3
11.2
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
478
2336
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Micron Technology 4ATF51264HZ-2G3B1 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965516-049.A00LF 8GB
Kingston HP24D4U7S8MBP-8 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Corsair CMX4GX3M2A1600C9 2GB
V-GEN D4H8GL26A8TS6 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3600C16-32GTZR 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW64GX4M4C3200C16 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMK32GX4M2Z3200C16 16GB
Corsair CMX8GX3M2A1600C11 4GB
Samsung M471A1K43DB1-CTD 8GB
A-DATA Technology DQVE1908 512MB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
PNY Electronics PNY 2GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2666C15-8GVR 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston 9905622-024.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A5143EB1-CRC 4GB
Report a bug
×
Bug description
Source link