RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D082-805G 2GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Compare
takeMS International AG TMS2GB264D082-805G 2GB vs Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Overall score
takeMS International AG TMS2GB264D082-805G 2GB
Overall score
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D082-805G 2GB
Report a bug
Below the latency in the PassMark tests, ns
46
63
Around 27% lower latency
Faster reading speed, GB/s
5
16.6
Average value in the tests
Reasons to consider
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Report a bug
Faster write speed, GB/s
8.2
1,852.4
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D082-805G 2GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
63
Read speed, GB/s
5,535.6
16.6
Write speed, GB/s
1,852.4
8.2
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
858
1863
takeMS International AG TMS2GB264D082-805G 2GB RAM comparisons
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A1G43TB1-CTD 8GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A2G43BB3-CWE 16GB
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK8GX4M2B4000C19 4GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Samsung M3 78T6553CZ3-CE6 512MB
Corsair CMW16GX4M2Z3200C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Kingston K821PJ-MID 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
Samsung M471A2K43CB1-CRC 16GB
Kingston 99P5474-014.A00LF 4GB
Corsair CMK64GX4M8Z2933C16 8GB
Kingston 9965525-155.A00LF 8GB
Apacer Technology GD2.1129WH.001 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA82GS6AFRFR-UH 16GB
Report a bug
×
Bug description
Source link