RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Compare
takeMS International AG TMS2GB264D083805EV 2GB vs Crucial Technology CT16G4DFD8213.C16FBD 16GB
Overall score
takeMS International AG TMS2GB264D083805EV 2GB
Overall score
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
Faster reading speed, GB/s
3
15.9
Average value in the tests
Reasons to consider
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Report a bug
Below the latency in the PassMark tests, ns
33
50
Around -52% lower latency
Faster write speed, GB/s
10.4
1,457.4
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
33
Read speed, GB/s
3,757.3
15.9
Write speed, GB/s
1,457.4
10.4
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
557
2847
takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-2666C15-8GVB 8GB
AMD R5316G1609U2K 8GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA81GR7AFR8N-UH 8GB
A-DATA Technology DOVF1B163G2G 2GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3000C16-16GTZR 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-4000C16-8GTZR 8GB
Kingston ACR512X64D3S13C9G 4GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-2666C19-8GSXK 8GB
Kingston 99U5403-124.A00LF 8GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
Samsung M393B1G70QH0-YK0 8GB
Apacer Technology 78.C1GMM.AUW0C 8GB
Avant Technology F641GU67F9333G 8GB
Samsung M378A1K43CB2-CRC 8GB
Report a bug
×
Bug description
Source link