RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3000C15-4GVRB 4GB
Compare
takeMS International AG TMS2GB264D083805EV 2GB vs G Skill Intl F4-3000C15-4GVRB 4GB
Overall score
takeMS International AG TMS2GB264D083805EV 2GB
Overall score
G Skill Intl F4-3000C15-4GVRB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
Faster reading speed, GB/s
3
17.2
Average value in the tests
Reasons to consider
G Skill Intl F4-3000C15-4GVRB 4GB
Report a bug
Below the latency in the PassMark tests, ns
30
50
Around -67% lower latency
Faster write speed, GB/s
13.5
1,457.4
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3000C15-4GVRB 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
30
Read speed, GB/s
3,757.3
17.2
Write speed, GB/s
1,457.4
13.5
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
557
3157
takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C15-4GVRB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hyundai Inc AR32C16S8K2HU416R 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3000C15-4GVRB 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3300C16-4GRKD 4GB
Kingston 9905403-134.A00LF 2GB
Kingston 9905678-005.A00G 8GB
Corsair CMD8GX3M2A2933C12 4GB
Transcend Information AQD-SD4U4GN21-SG 4GB
Apacer Technology 78.01G86.9H50C 1GB
Mushkin 991556 (996556) 2GB
Samsung M393B5270CH0-CH9 4GB
Kingston ACR26D4S9D8ME-16 16GB
Samsung M378A5244CB0-CTD 4GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW64GX4M4C3200C16 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD64GX4M4A2400C14 16GB
Report a bug
×
Bug description
Source link