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takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB

Overall score
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Overall score
star star star star star
Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Differences Specifications Comments

Differences

takeMS International AG TMS2GB264D083805EV 2GB Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 16.9
    Average value in the tests
Micron Technology 8ATF1G64AZ-3G2R1 8GB Reasons to consider
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 50
    Around -61% lower latency
  • Faster write speed, GB/s
    12.4 left arrow 1,457.4
    Average value in the tests

Specifications

Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    50 left arrow 31
  • Read speed, GB/s
    3,757.3 left arrow 16.9
  • Write speed, GB/s
    1,457.4 left arrow 12.4
  • Memory bandwidth, mbps
    6400 left arrow no data
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow , 1.20000005, CAS Supported:
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow no data
  • Ranking PassMark (The more the better)
    557 left arrow 3043

takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB RAM comparisons

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SK Hynix HMA851U6JJR6N-VK 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

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