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TwinMOS 8DHE3MN8-HATP 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB

TwinMOS 8DHE3MN8-HATP 2GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB

Overall score
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Overall score
star star star star star
Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Differences Specifications Comments

Differences

TwinMOS 8DHE3MN8-HATP 2GB Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB
Report a bug
  • Faster write speed, GB/s
    870.4 left arrow 8.6
    Average value in the tests
Samsung 18ASF1G72PDZ-2G1B1 16GB Reasons to consider
Samsung 18ASF1G72PDZ-2G1B1 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 87
    Around -172% lower latency
  • Faster reading speed, GB/s
    9.8 left arrow 3
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
TwinMOS 8DHE3MN8-HATP 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    87 left arrow 32
  • Read speed, GB/s
    3,155.6 left arrow 9.8
  • Write speed, GB/s
    870.4 left arrow 8.6
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    417 left arrow 2271

TwinMOS 8DHE3MN8-HATP 2GB RAM comparisons

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

Samsung 18ASF1G72PDZ-2G1B1 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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