RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Compare
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Overall score
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Report a bug
Faster reading speed, GB/s
2
11.4
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
96
Around -256% lower latency
Faster write speed, GB/s
11.8
1,336.0
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
96
27
Read speed, GB/s
2,725.2
11.4
Write speed, GB/s
1,336.0
11.8
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
438
2062
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM comparisons
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB RAM comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905458-017.A01LF 4GB
Kingston ACR26D4U9S8HJ-8 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston KHX2666C13/8GX 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston KF2666C16D4/16G 16GB
Samsung M393B5270DH0-YH9 4GB
Samsung M393B1G70QH0-CMA 8GB
G Skill Intl F3-2133C9-4GAB 4GB
SK Hynix HMA82GS6JJR8N-VK 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
Kingston KHX318C10FR/8G 8GB
Maxsun MSD48G32Q3 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
SK Hynix HMT351R7EFR8C-RD 4GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Elpida EBE21UE8ACUA-8G-E 2GB
Samsung M471A5644EB0-CPB 2GB
SK Hynix HMT451U7BFR8C-RD 4GB
G Skill Intl F4-4000C16-16GVKA 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston 9965589-013.A00G 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMD16GX4M2A2400C14 8GB
Corsair CM5S16GM4800A40K2 16GB
G Skill Intl F4-4000C18-8GTZKK 8GB
Report a bug
×
Bug description
Source link