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Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Samsung M471A5644EB0-CPB 2GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Samsung M471A5644EB0-CPB 2GB

Overall score
star star star star star
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Overall score
star star star star star
Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

Differences Specifications Comments

Differences

Wilk Elektronik S.A. GR1333D364L9/4G 4GB Reasons to consider
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Report a bug
Samsung M471A5644EB0-CPB 2GB Reasons to consider
Samsung M471A5644EB0-CPB 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 44
    Around -57% lower latency
  • Faster reading speed, GB/s
    13.2 left arrow 10.9
    Average value in the tests
  • Faster write speed, GB/s
    9.1 left arrow 7.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Samsung M471A5644EB0-CPB 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    44 left arrow 28
  • Read speed, GB/s
    10.9 left arrow 13.2
  • Write speed, GB/s
    7.5 left arrow 9.1
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1853 left arrow 1989

Wilk Elektronik S.A. GR1333D364L9/4G 4GB RAM comparisons

Ramaxel Technology RMR1870EC58E9F1333 4GB
Kingston ACR26D4U9S1KA-4 4GB

Samsung M471A5644EB0-CPB 2GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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