RAM
DDR5
DDR4
DDR3
DDR2
Über die Website
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Über die Website
de
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Gesamtnote
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Gesamtnote
star star star star star
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Unterschiede Spezifikationen Kommentare

Unterschiede

Nanya Technology NT2GT64U8HD0BN-AD 2GB Gründe für die Berücksichtigung
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Einen Fehler melden
  • Schnellere Lesegeschwindigkeit, GB/s
    4 left arrow 19.4
    Durchschnittswert bei den Tests
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB Gründe für die Berücksichtigung
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Einen Fehler melden
  • Unterhalb der Latenzzeit in den PassMark-Tests, ns
    32 left arrow 72
    Rund um -125% geringere Latenzzeit
  • Schnellere Schreibgeschwindigkeit, GB/s
    16.3 left arrow 1,938.7
    Durchschnittswert bei den Tests
  • Höhere Speicherbandbreite, mbps
    21300 left arrow 6400
    Rund um 3.33 höhere Bandbreite

Spezifikationen

Vollständige Liste der technischen Spezifikationen
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Wichtigste Merkmale
  • Speicherart
    DDR2 left arrow DDR4
  • Latenzzeit in PassMark, ns
    72 left arrow 32
  • Lesegeschwindigkeit, GB/s
    4,241.0 left arrow 19.4
  • Schreibgeschwindigkeit, GB/s
    1,938.7 left arrow 16.3
  • Speicherbandbreite, mbps
    6400 left arrow 21300
Other
  • Beschreibung
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Taktgeschwindigkeit
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (Je mehr, desto besser)
    677 left arrow 3726

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM-Vergleiche

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM-Vergleiche

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Letzte Vergleiche

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Speicher RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation W4N2666PS-8G 8GB
Panram International Corporation W4N2666PS-8G 8GB
Speicher RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Speicher RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Ramaxel Technology RMUA5180MH78HBF-2666 16GB
Ramaxel Technology RMUA5180MH78HBF-2666 16GB
Speicher RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Speicher RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Speicher RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-4800C19-8GTESC 8GB
G Skill Intl F4-4800C19-8GTESC 8GB
Speicher RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Speicher RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Speicher RAM
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Panram International Corporation PUD43000C164G2NJK 4GB
Panram International Corporation PUD43000C164G2NJK 4GB
Speicher RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Speicher RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation D4N2666PS-16G 16GB
Panram International Corporation D4N2666PS-16G 16GB
Speicher RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
Speicher RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Speicher RAM