RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Confronto
Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Punteggio complessivo
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Punteggio complessivo
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Differenze
Specifiche tecniche
Commenti
Differenze
Motivi da considerare
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Segnala un bug
Velocità di lettura più elevata, GB/s
4
19.4
Valore medio nei test
Motivi da considerare
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Segnala un bug
Al di sotto della latenza nei test PassMark, ns
32
72
Intorno -125% latenza inferiore
Velocità di scrittura più elevata, GB/s
16.3
1,938.7
Valore medio nei test
Larghezza di banda di memoria superiore, mbps
21300
6400
Intorno 3.33 larghezza di banda superiore
Specifiche tecniche
Elenco completo delle specifiche tecniche
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Caratteristiche principali
Tipo di memoria
DDR2
DDR4
Latenza in PassMark, ns
72
32
Velocità di lettura, GB/s
4,241.0
19.4
Velocità di scrittura, GB/s
1,938.7
16.3
Larghezza di banda della memoria, mbps
6400
21300
Other
Descrizione
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Temporizzazioni / Velocità di clock
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classifica PassMark (più sono, meglio è)
677
3726
Nanya Technology NT2GT64U8HD0BN-AD 2GB Confronto tra le RAM
Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB Confronto tra le RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Ultimi confronti
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation W4N2666PS-8G 8GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-4800C19-8GTESC 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Panram International Corporation PUD43000C164G2NJK 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation D4N2666PS-16G 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology BL16G32C16U4R.16FE 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
A-DATA Technology DDR4 2400 16GB
Corsair CMK16GX4M2K4133C19 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Segnala un bug
×
Bug description
Source link