Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

差异

  • 更快的读取速度,GB/s
    4 left arrow 19.4
    测试中的平均数值
  • 低于PassMark测试中的延时,ns
    32 left arrow 72
    左右 -125% 更低的延时
  • 更快的写入速度,GB/s
    16.3 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽,mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时,ns
    72 left arrow 32
  • 读取速度,GB/s
    4,241.0 left arrow 19.4
  • 写入速度,GB/s
    1,938.7 left arrow 16.3
  • 内存带宽,mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    677 left arrow 3726
RAM Latency Calculator
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最新比较