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DDR3 RAM-Liste
Alle Speichermodule, sortiert nach steigender Latenz
№
Bandbreite
Latenzzeit, ns
Lesegeschwindigkeit, GB/s
Schreibgeschwindigkeit, GB/s
№
1821
RAM
Nanya Technology M2F4G64CB88B7N-DI 4GB
Latency
28
Read speed
13.5
Write speed
8.0
№
1822
RAM
Kingston KHX1600C9S3/4G 4GB
Latency
28
Read speed
12.2
Write speed
8.0
№
1823
RAM
Nanya Technology M2F4G64CB88C7N-DI 4GB
Latency
28
Read speed
12.6
Write speed
7.6
№
1824
RAM
Nanya Technology M2F4G64CB88D7N-DI 4GB
Latency
28
Read speed
13.1
Write speed
8.0
№
1825
RAM
Samsung M471B5673EH1-CH9 2GB
Latency
28
Read speed
11.7
Write speed
8.5
№
1826
RAM
A-DATA Technology EL63I1C1624ZV 4GB
Latency
28
Read speed
12.2
Write speed
7.3
№
1827
RAM
Corsair CMV4GX3M1C1600C11 4GB
Latency
28
Read speed
12.9
Write speed
8.5
№
1828
RAM
Nanya Technology M2F8G64CB8HB5N-CG 8GB
Latency
28
Read speed
11.3
Write speed
6.4
№
1829
RAM
Carry Technology Co. Ltd. S3A8GA3-16GBJT3A00 8GB
Latency
28
Read speed
12.0
Write speed
8.0
№
1830
RAM
Strontium SRT8G86U1-H9M 8GB
Latency
28
Read speed
9.1
Write speed
4.5
№
1831
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Latency
28
Read speed
10.9
Write speed
7.1
№
1832
RAM
Ramaxel Technology RMR5040EB68FAW1600 8GB
Latency
28
Read speed
12.8
Write speed
8.3
№
1833
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
Latency
28
Read speed
10.5
Write speed
8.4
№
1834
RAM
A-DATA Technology MI74C1D16 8GB
Latency
28
Read speed
10.4
Write speed
5.1
№
1835
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125U6TFR8C-H9 2GB
Latency
28
Read speed
12.4
Write speed
7.3
№
1836
RAM
Samsung TRV16G36CA9VLD-Z8 16GB
Latency
28
Read speed
11.2
Write speed
11.0
№
1837
RAM
Hynix Semiconductor (Hyundai Electronics) HMT151R7BFR4C-H9 4GB
Latency
28
Read speed
10.7
Write speed
9.1
№
1838
RAM
A-DATA Technology MIF4D2C087KZ1 4GB
Latency
28
Read speed
11.2
Write speed
9.0
№
1839
RAM
Hynix Semiconductor (Hyundai Electronics) HMT325S6
Latency
28
Read speed
10.6
Write speed
7.2
№
1840
RAM
G Skill Intl F3-2400C10-4GTD 4GB
Latency
28
Read speed
19.1
Write speed
13.1
«
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Letzte Vergleiche
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Kingston 2GB-DDR2 800Mhz 2GB
A-DATA Technology AE4S240038G17-BHYA 8GB
Samsung M471B1G73DB0-YK0 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Kingston 99U5471-030.A00LF 8GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3200C16-8GVS 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Transcend Information JM2666HSB-8G 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Hewlett-Packard 7EH64AA# 8GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMK8GX4M2A2400C16 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
SK Hynix HMA81GU6AFR8N-UH 8GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BLS8G4D32AESCK.M8FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4X16GC3200C16K2E 16GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology CB16GS2400.C16J 16GB
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