RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Selezionare la RAM 1
Selezionare la RAM 2
Confronto
DDR3 Elenco RAM
Tutti i moduli di memoria, ordinati in base alla latenza crescente
№
Larghezza di banda
Latenza, ns
Velocità di lettura, GB/s
Velocità di scrittura, GB/s
№
1821
RAM
Nanya Technology M2F4G64CB88B7N-DI 4GB
Latency
28
Read speed
13.5
Write speed
8.0
№
1822
RAM
Kingston KHX1600C9S3/4G 4GB
Latency
28
Read speed
12.2
Write speed
8.0
№
1823
RAM
Nanya Technology M2F4G64CB88C7N-DI 4GB
Latency
28
Read speed
12.6
Write speed
7.6
№
1824
RAM
Nanya Technology M2F4G64CB88D7N-DI 4GB
Latency
28
Read speed
13.1
Write speed
8.0
№
1825
RAM
Samsung M471B5673EH1-CH9 2GB
Latency
28
Read speed
11.7
Write speed
8.5
№
1826
RAM
A-DATA Technology EL63I1C1624ZV 4GB
Latency
28
Read speed
12.2
Write speed
7.3
№
1827
RAM
Corsair CMV4GX3M1C1600C11 4GB
Latency
28
Read speed
12.9
Write speed
8.5
№
1828
RAM
Nanya Technology M2F8G64CB8HB5N-CG 8GB
Latency
28
Read speed
11.3
Write speed
6.4
№
1829
RAM
Carry Technology Co. Ltd. S3A8GA3-16GBJT3A00 8GB
Latency
28
Read speed
12.0
Write speed
8.0
№
1830
RAM
Strontium SRT8G86U1-H9M 8GB
Latency
28
Read speed
9.1
Write speed
4.5
№
1831
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Latency
28
Read speed
10.9
Write speed
7.1
№
1832
RAM
Ramaxel Technology RMR5040EB68FAW1600 8GB
Latency
28
Read speed
12.8
Write speed
8.3
№
1833
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
Latency
28
Read speed
10.5
Write speed
8.4
№
1834
RAM
A-DATA Technology MI74C1D16 8GB
Latency
28
Read speed
10.4
Write speed
5.1
№
1835
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125U6TFR8C-H9 2GB
Latency
28
Read speed
12.4
Write speed
7.3
№
1836
RAM
Samsung TRV16G36CA9VLD-Z8 16GB
Latency
28
Read speed
11.2
Write speed
11.0
№
1837
RAM
Hynix Semiconductor (Hyundai Electronics) HMT151R7BFR4C-H9 4GB
Latency
28
Read speed
10.7
Write speed
9.1
№
1838
RAM
A-DATA Technology MIF4D2C087KZ1 4GB
Latency
28
Read speed
11.2
Write speed
9.0
№
1839
RAM
Hynix Semiconductor (Hyundai Electronics) HMT325S6
Latency
28
Read speed
10.6
Write speed
7.2
№
1840
RAM
G Skill Intl F3-2400C10-4GTD 4GB
Latency
28
Read speed
19.1
Write speed
13.1
«
89
90
91
92
93
94
»
Ultimi confronti
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9965596-019.B01G 4GB
Kingston 9905403-156.A00LF 2GB
Corsair CMW16GX4M2C3466C16 8GB
Kingston KHX318C10FR/8G 8GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Samsung M471B1G73EB0-YK0 8GB
Corsair CM4B8G2J3000K15K 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Samsung M471A1K43CB1-CRC 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology V-GeN D4V16GL24A8R 16GB
PNY Electronics PNY 2GB
MemxPro Inc. D4S8GHIOFFC 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMK16GX4M2B3733C17 8GB
Elpida EBJ41UF8BDW0-GN-F 4GB
G Skill Intl F4-2666C19-8GRS 8GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3200C14-8GTZSK 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Essencore Limited KD48GU880-32A160T 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
Segnala un bug
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Polski 
中文 
日本語 
