RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Informazioni sul sito
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Selezionare la RAM 1
Selezionare la RAM 2
Confronto
DDR3 Elenco RAM
Tutti i moduli di memoria, ordinati in base alla latenza crescente
№
Larghezza di banda
Latenza, ns
Velocità di lettura, GB/s
Velocità di scrittura, GB/s
№
1821
RAM
Nanya Technology M2F4G64CB88B7N-DI 4GB
Latency
28
Read speed
13.5
Write speed
8.0
№
1822
RAM
Kingston KHX1600C9S3/4G 4GB
Latency
28
Read speed
12.2
Write speed
8.0
№
1823
RAM
Nanya Technology M2F4G64CB88C7N-DI 4GB
Latency
28
Read speed
12.6
Write speed
7.6
№
1824
RAM
Nanya Technology M2F4G64CB88D7N-DI 4GB
Latency
28
Read speed
13.1
Write speed
8.0
№
1825
RAM
Samsung M471B5673EH1-CH9 2GB
Latency
28
Read speed
11.7
Write speed
8.5
№
1826
RAM
A-DATA Technology EL63I1C1624ZV 4GB
Latency
28
Read speed
12.2
Write speed
7.3
№
1827
RAM
Corsair CMV4GX3M1C1600C11 4GB
Latency
28
Read speed
12.9
Write speed
8.5
№
1828
RAM
Nanya Technology M2F8G64CB8HB5N-CG 8GB
Latency
28
Read speed
11.3
Write speed
6.4
№
1829
RAM
Carry Technology Co. Ltd. S3A8GA3-16GBJT3A00 8GB
Latency
28
Read speed
12.0
Write speed
8.0
№
1830
RAM
Strontium SRT8G86U1-H9M 8GB
Latency
28
Read speed
9.1
Write speed
4.5
№
1831
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Latency
28
Read speed
10.9
Write speed
7.1
№
1832
RAM
Ramaxel Technology RMR5040EB68FAW1600 8GB
Latency
28
Read speed
12.8
Write speed
8.3
№
1833
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
Latency
28
Read speed
10.5
Write speed
8.4
№
1834
RAM
A-DATA Technology MI74C1D16 8GB
Latency
28
Read speed
10.4
Write speed
5.1
№
1835
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125U6TFR8C-H9 2GB
Latency
28
Read speed
12.4
Write speed
7.3
№
1836
RAM
Samsung TRV16G36CA9VLD-Z8 16GB
Latency
28
Read speed
11.2
Write speed
11.0
№
1837
RAM
Hynix Semiconductor (Hyundai Electronics) HMT151R7BFR4C-H9 4GB
Latency
28
Read speed
10.7
Write speed
9.1
№
1838
RAM
A-DATA Technology MIF4D2C087KZ1 4GB
Latency
28
Read speed
11.2
Write speed
9.0
№
1839
RAM
Hynix Semiconductor (Hyundai Electronics) HMT325S6
Latency
28
Read speed
10.6
Write speed
7.2
№
1840
RAM
G Skill Intl F3-2400C10-4GTD 4GB
Latency
28
Read speed
19.1
Write speed
13.1
«
89
90
91
92
93
94
»
Ultimi confronti
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C18-8GTRG 8GB
Kingston KHX2133C11D3/4GX 4GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
SK Hynix HMA82GS6AFR8N-UH 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Apacer Technology 78.CAGPW.40C0B 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2666C15-8GVB 8GB
Kingston HP698650-154-MCN 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL16G26C16U4B.16FE 16GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-4000C18-32GVK 32GB
Asgard VMA45UG-MEC1U2AW1 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMV16GX4M1L2400C16 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M471A1A43DB0-CPB 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-2800C15-8GVR 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
Segnala un bug
×
Bug description
Source link