RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Compara
DDR3 Lista de RAM
Todos los módulos de memoria, ordenados por latencia creciente
№
Ancho de banda
Latencia, ns
Velocidad de lectura, GB/s
Velocidad de escritura, GB/s
№
1821
RAM
Nanya Technology M2F4G64CB88B7N-DI 4GB
Latency
28
Read speed
13.5
Write speed
8.0
№
1822
RAM
Kingston KHX1600C9S3/4G 4GB
Latency
28
Read speed
12.2
Write speed
8.0
№
1823
RAM
Nanya Technology M2F4G64CB88C7N-DI 4GB
Latency
28
Read speed
12.6
Write speed
7.6
№
1824
RAM
Nanya Technology M2F4G64CB88D7N-DI 4GB
Latency
28
Read speed
13.1
Write speed
8.0
№
1825
RAM
Samsung M471B5673EH1-CH9 2GB
Latency
28
Read speed
11.7
Write speed
8.5
№
1826
RAM
A-DATA Technology EL63I1C1624ZV 4GB
Latency
28
Read speed
12.2
Write speed
7.3
№
1827
RAM
Corsair CMV4GX3M1C1600C11 4GB
Latency
28
Read speed
12.9
Write speed
8.5
№
1828
RAM
Nanya Technology M2F8G64CB8HB5N-CG 8GB
Latency
28
Read speed
11.3
Write speed
6.4
№
1829
RAM
Carry Technology Co. Ltd. S3A8GA3-16GBJT3A00 8GB
Latency
28
Read speed
12.0
Write speed
8.0
№
1830
RAM
Strontium SRT8G86U1-H9M 8GB
Latency
28
Read speed
9.1
Write speed
4.5
№
1831
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Latency
28
Read speed
10.9
Write speed
7.1
№
1832
RAM
Ramaxel Technology RMR5040EB68FAW1600 8GB
Latency
28
Read speed
12.8
Write speed
8.3
№
1833
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
Latency
28
Read speed
10.5
Write speed
8.4
№
1834
RAM
A-DATA Technology MI74C1D16 8GB
Latency
28
Read speed
10.4
Write speed
5.1
№
1835
RAM
Hynix Semiconductor (Hyundai Electronics) HMT125U6TFR8C-H9 2GB
Latency
28
Read speed
12.4
Write speed
7.3
№
1836
RAM
Samsung TRV16G36CA9VLD-Z8 16GB
Latency
28
Read speed
11.2
Write speed
11.0
№
1837
RAM
Hynix Semiconductor (Hyundai Electronics) HMT151R7BFR4C-H9 4GB
Latency
28
Read speed
10.7
Write speed
9.1
№
1838
RAM
A-DATA Technology MIF4D2C087KZ1 4GB
Latency
28
Read speed
11.2
Write speed
9.0
№
1839
RAM
Hynix Semiconductor (Hyundai Electronics) HMT325S6
Latency
28
Read speed
10.6
Write speed
7.2
№
1840
RAM
G Skill Intl F3-2400C10-4GTD 4GB
Latency
28
Read speed
19.1
Write speed
13.1
«
89
90
91
92
93
94
»
Últimas comparaciones
Crucial Technology CT25664AA800.M16FG 2GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Kingston 99U5584-005.A00LF 4GB
Corsair CM4B8G2J2666A15D 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Kingston 99U5584-005.A00LF 4GB
Smart Modular SF4721G8CKHH6DFSDS 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
SK Hynix HMA82GS6AFRFR-UH 16GB
Samsung M378B5673EH1-CF8 2GB
Panram International Corporation PUD43000C164G2NJK 4GB
Kingston 9905471-002.A00LF 2GB
Corsair CM4X32GC3200C16K2E 32GB
G Skill Intl F3-2400C11-8GSR 8GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Kingston MSI16D3LS1MNG/8G 8GB
Corsair CMW64GX4M8A2666C16 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-2666C18-8GRS 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Teikon TMA851S6CJR6N-VKSC 4GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
G Skill Intl F4-3200C14-16GTZN 16GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Kingston KHX3000C16D4/16GX 16GB
Informar de un error
×
Bug description
Source link