RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology AD4S3200316G22-BHYD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Compare
A-DATA Technology AD4S3200316G22-BHYD 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
A-DATA Technology AD4S3200316G22-BHYD 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology AD4S3200316G22-BHYD 16GB
Report a bug
Faster write speed, GB/s
13.2
12.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
66
Around -175% lower latency
Faster reading speed, GB/s
16
13.9
Average value in the tests
Specifications
Complete list of technical specifications
A-DATA Technology AD4S3200316G22-BHYD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
66
24
Read speed, GB/s
13.9
16.0
Write speed, GB/s
13.2
12.5
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2429
2925
A-DATA Technology AD4S3200316G22-BHYD 16GB RAM comparisons
A-DATA Technology DDR4 3000 2OZ 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AD4S3200316G22-BHYD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KP4T2F-PSB 4GB
G Skill Intl F4-3000C15-8GRRB 8GB
Samsung M391B5673EH1-CH9 2GB
Corsair CM4X16GE2133C15S2 16GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-2666C15-8GVB 8GB
Kingston ACR256X64D3S1333C9 2GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Apacer Technology 78.B1GN3.4032B 4GB
Kingston 99P5474-014.A00LF 4GB
G Skill Intl F4-4800C18-8GTRG 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3000C15-4GRBB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMK8GX4M1A2400C16 8GB
Apacer Technology 78.01G86.9H50C 1GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Micron Technology 16KTF51264HZ-1G6M1 4GB
Samsung M393A2K40CB1-CRC 16GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9905702-120.A00G 8GB
Samsung M393B5170FH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Report a bug
×
Bug description
Source link