RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology ADOVE1A0834E 1GB
Samsung M378A5244CB0-CWE 4GB
Compare
A-DATA Technology ADOVE1A0834E 1GB vs Samsung M378A5244CB0-CWE 4GB
Overall score
A-DATA Technology ADOVE1A0834E 1GB
Overall score
Samsung M378A5244CB0-CWE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology ADOVE1A0834E 1GB
Report a bug
Reasons to consider
Samsung M378A5244CB0-CWE 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
94
Around -176% lower latency
Faster reading speed, GB/s
16.7
1
Average value in the tests
Faster write speed, GB/s
12.3
1,165.4
Average value in the tests
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology ADOVE1A0834E 1GB
Samsung M378A5244CB0-CWE 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
94
34
Read speed, GB/s
1,882.0
16.7
Write speed, GB/s
1,165.4
12.3
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
305
2584
A-DATA Technology ADOVE1A0834E 1GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB
Samsung M378A5244CB0-CWE 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology ADOVE1A0834E 1GB
Samsung M378A5244CB0-CWE 4GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CMK8GX4M2C3000C16 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Samsung M471B5173BH0-CK0 4GB
Kingston 99U5469-045.A00LF 4GB
Samsung M471A2K43CB1-CRCR 16GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
G Skill Intl F4-3600C16-8GTRG 8GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMR64GX4M4C3000C15 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Essencore Limited KD4AGSA8A-32N2200 16GB
SK Hynix HYMP112S64CP6-S6 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Avant Technology J644GU44J2320NQ 32GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4000C18-16GTZR 16GB
Samsung M4 70T5663QZ3-CE6 2GB
G Skill Intl F4-3000C15-8GVS 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Samsung M378B5273CH0-CH9 4GB
Samsung M391A1G43EB1-CPB 8GB
Report a bug
×
Bug description
Source link