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A-DATA Technology DDR2 800G 2GB
Samsung M471A5644EB0-CPB 2GB

A-DATA Technology DDR2 800G 2GB vs Samsung M471A5644EB0-CPB 2GB

Overall score
star star star star star
A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Overall score
star star star star star
Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

Differences Specifications Comments

Differences

A-DATA Technology DDR2 800G 2GB Reasons to consider
A-DATA Technology DDR2 800G 2GB
Report a bug
  • Faster reading speed, GB/s
    5 left arrow 13.2
    Average value in the tests
Samsung M471A5644EB0-CPB 2GB Reasons to consider
Samsung M471A5644EB0-CPB 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 49
    Around -75% lower latency
  • Faster write speed, GB/s
    9.1 left arrow 2,343.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology DDR2 800G 2GB
Samsung M471A5644EB0-CPB 2GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 28
  • Read speed, GB/s
    5,135.8 left arrow 13.2
  • Write speed, GB/s
    2,343.1 left arrow 9.1
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    843 left arrow 1989

A-DATA Technology DDR2 800G 2GB RAM comparisons

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Samsung M471A5644EB0-CPB 2GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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