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A-DATA Technology DDR3 1866 2OZ 4GB
Samsung M378A5244CB0-CVF 4GB

A-DATA Technology DDR3 1866 2OZ 4GB vs Samsung M378A5244CB0-CVF 4GB

Overall score
star star star star star
A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

Overall score
star star star star star
Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

Differences Specifications Comments

Differences

A-DATA Technology DDR3 1866 2OZ 4GB Reasons to consider
A-DATA Technology DDR3 1866 2OZ 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    21 left arrow 30
    Around 30% lower latency
  • Faster reading speed, GB/s
    17.8 left arrow 16
    Average value in the tests
Samsung M378A5244CB0-CVF 4GB Reasons to consider
Samsung M378A5244CB0-CVF 4GB
Report a bug
  • Faster write speed, GB/s
    12.3 left arrow 10.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    23400 left arrow 12800
    Around 1.83 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology DDR3 1866 2OZ 4GB
Samsung M378A5244CB0-CVF 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    21 left arrow 30
  • Read speed, GB/s
    17.8 left arrow 16.0
  • Write speed, GB/s
    10.0 left arrow 12.3
  • Memory bandwidth, mbps
    12800 left arrow 23400
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • Ranking PassMark (The more the better)
    2771 left arrow 2709

A-DATA Technology DDR3 1866 2OZ 4GB RAM comparisons

A-DATA Technology DDR3 1600G 4GB
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Samsung M378A5244CB0-CVF 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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