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A-DATA Technology DQVE1908 512MB
Samsung M378A2G43MB1-CTD 16GB
Compare
A-DATA Technology DQVE1908 512MB vs Samsung M378A2G43MB1-CTD 16GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
Samsung M378A2G43MB1-CTD 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
11.6
Average value in the tests
Reasons to consider
Samsung M378A2G43MB1-CTD 16GB
Report a bug
Below the latency in the PassMark tests, ns
43
66
Around -53% lower latency
Faster write speed, GB/s
11.2
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Samsung M378A2G43MB1-CTD 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
43
Read speed, GB/s
2,775.5
11.6
Write speed, GB/s
1,557.9
11.2
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
382
2615
A-DATA Technology DQVE1908 512MB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
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Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL16G32C16S4B.M16FE1 16GB
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A-DATA Technology AO1P26KC8T1-BPXS 8GB
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SK Hynix HMA851U6CJR6N-UH 4GB
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