RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
Samsung M393A1G40EB1-CRC 8GB
Compare
A-DATA Technology DQVE1908 512MB vs Samsung M393A1G40EB1-CRC 8GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
Samsung M393A1G40EB1-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
10.5
Average value in the tests
Reasons to consider
Samsung M393A1G40EB1-CRC 8GB
Report a bug
Below the latency in the PassMark tests, ns
52
66
Around -27% lower latency
Faster write speed, GB/s
7.7
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Samsung M393A1G40EB1-CRC 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
52
Read speed, GB/s
2,775.5
10.5
Write speed, GB/s
1,557.9
7.7
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
382
2236
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Samsung M393A1G40EB1-CRC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVR16N11/8-SP 8GB
Corsair CMT64GX4M8Z3600C16 8GB
A-DATA Technology DQVE1908 512MB
Samsung M393A1G40EB1-CRC 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4000C19-4GTZ 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
Kingston 99U5428-063.A00LF 8GB
Mushkin 99[2/7/4]198F 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMD32GX4M4C3200C16-R 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Maxsun MSD48G30M3 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 9965662-018.A00G 32GB
Corsair CMX4GX3M2A1600C9 2GB
Samsung M378A2G43AB3-CWE 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Kingston 99U5469-045.A00LF 4GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
Report a bug
×
Bug description
Source link