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A-DATA Technology DQVE1908 512MB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

A-DATA Technology DQVE1908 512MB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Overall score
star star star star star
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Differences Specifications Comments

Differences

A-DATA Technology DQVE1908 512MB Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 66
    Around -113% lower latency
  • Faster reading speed, GB/s
    20.5 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    15.5 left arrow 1,557.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    66 left arrow 31
  • Read speed, GB/s
    2,775.5 left arrow 20.5
  • Write speed, GB/s
    1,557.9 left arrow 15.5
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    382 left arrow 3649

A-DATA Technology DQVE1908 512MB RAM comparisons

Qimonda ITC 1GB
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Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM comparisons

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A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
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