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A-DATA Technology VDQVE1B16 2GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Compare
A-DATA Technology VDQVE1B16 2GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Overall score
A-DATA Technology VDQVE1B16 2GB
Overall score
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology VDQVE1B16 2GB
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Faster reading speed, GB/s
4
15.7
Average value in the tests
Faster write speed, GB/s
2,061.2
13.3
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
46
Around -48% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
31
Read speed, GB/s
4,937.3
15.7
Write speed, GB/s
2,061.2
13.3
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
759
3318
A-DATA Technology VDQVE1B16 2GB RAM comparisons
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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