RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Compare
A-DATA Technology VDQVE1B16 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Overall score
A-DATA Technology VDQVE1B16 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
Faster reading speed, GB/s
4
17.2
Average value in the tests
Faster write speed, GB/s
2,061.2
13.0
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
46
Around -100% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
23
Read speed, GB/s
4,937.3
17.2
Write speed, GB/s
2,061.2
13.0
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
759
3004
A-DATA Technology VDQVE1B16 2GB RAM comparisons
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5469-045.A00LF 4GB
Kingston 9905599-029.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C14-8GTZN 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMW64GX4M8C3466C16 8GB
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3600C16-8GTRS 8GB
SpecTek Incorporated PSD34G13332 4GB
G Skill Intl F4-3000C16-16GSXFB 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSB.8FBD 4GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-3733C17-4GVK 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3333C16-8GTZB 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905701-132.A00G 16GB
PNY Electronics PNY 2GB
Avant Technology J644GU44J2320NQ 32GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M471A1K1KCB1-CRC 8GB
Report a bug
×
Bug description
Source link