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A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

A-DATA Technology VDQVE1B16 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Overall score
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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Differences Specifications Comments

Differences

A-DATA Technology VDQVE1B16 2GB Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 18.7
    Average value in the tests
  • Faster write speed, GB/s
    2,061.2 left arrow 14.2
    Average value in the tests
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    19 left arrow 46
    Around -142% lower latency
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 19
  • Read speed, GB/s
    4,937.3 left arrow 18.7
  • Write speed, GB/s
    2,061.2 left arrow 14.2
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    759 left arrow 3220

A-DATA Technology VDQVE1B16 2GB RAM comparisons

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB RAM comparisons

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