A-DATA Technology VDQVE1B16 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

総合得点

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

総合得点

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

相違点仕様コメント

相違点

A-DATA Technology VDQVE1B16 2GB

考慮すべき理由
A-DATA Technology VDQVE1B16 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 18.7

テスト平均値
書き込み速度の高速化、GB/s

2,061.2 14.2

テスト平均値

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

考慮すべき理由
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

19 46

周辺 -142% 低遅延
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology VDQVE1B16 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

46 19
読み出し速度、GB/s

4,937.3 18.7
書き込み速度、GB/秒

2,061.2 14.2
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

759 3220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Transcend Information TS2GSH64V4B 16GB

Transcend Information TS2GSH64V4B 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Apacer Technology 78.CAGNT.4050B 8GB

Apacer Technology 78.CAGNT.4050B 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMK32GX4M4B3866C18 8GB

Corsair CMK32GX4M4B3866C18 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMK32GX4M4D3200C16 8GB

Corsair CMK32GX4M4D3200C16 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Kingston 9965589-030.D01G 8GB

Kingston 9965589-030.D01G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK16GX4M4B3200C16 4GB

Corsair CMK16GX4M4B3200C16 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Kingston KHX2933C17S4/8G 8GB

Kingston KHX2933C17S4/8G 8GB