AMD R5316G1609U2K 8GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Overall score

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Differences Specifications Comments

Differences

AMD R5316G1609U2K 8GB

Reasons to consider
AMD R5316G1609U2K 8GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Below the latency in the PassMark tests, ns

31 73

Around -135% lower latency
Faster reading speed, GB/s

20.5 6.3

Average value in the tests
Faster write speed, GB/s

15.5 5.2

Average value in the tests
Higher memory bandwidth, mbps

25600 12800

Around 2 higher bandwidth

Specifications

Complete list of technical specifications

AMD R5316G1609U2K 8GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

73 31
Read speed, GB/s

6.3 20.5
Write speed, GB/s

5.2 15.5
Memory bandwidth, mbps

12800 25600

Other

Description

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

1309 3649

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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