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AMD R534G1601U1S-UO 4GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB

AMD R534G1601U1S-UO 4GB vs Micron Technology 8ATF2G64AZ-3G2E1 16GB

Overall score
star star star star star
AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Overall score
star star star star star
Micron Technology 8ATF2G64AZ-3G2E1 16GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB

Differences Specifications Comments

Differences

AMD R534G1601U1S-UO 4GB Reasons to consider
AMD R534G1601U1S-UO 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 33
    Around 18% lower latency
Micron Technology 8ATF2G64AZ-3G2E1 16GB Reasons to consider
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Report a bug
  • Faster reading speed, GB/s
    16.9 left arrow 14.7
    Average value in the tests
  • Faster write speed, GB/s
    10.4 left arrow 9.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
AMD R534G1601U1S-UO 4GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 33
  • Read speed, GB/s
    14.7 left arrow 16.9
  • Write speed, GB/s
    9.2 left arrow 10.4
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2272 left arrow 3035

AMD R534G1601U1S-UO 4GB RAM comparisons

AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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