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AMD R538G1601U2S 8GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

AMD R538G1601U2S 8GB vs Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Overall score
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Overall score
star star star star star
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Differences Specifications Comments

Differences

AMD R538G1601U2S 8GB Reasons to consider
AMD R538G1601U2S 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    19 left arrow 35
    Around 46% lower latency
  • Faster reading speed, GB/s
    18.4 left arrow 10.5
    Average value in the tests
  • Faster write speed, GB/s
    12.3 left arrow 8.1
    Average value in the tests
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB Reasons to consider
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
AMD R538G1601U2S 8GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    19 left arrow 35
  • Read speed, GB/s
    18.4 left arrow 10.5
  • Write speed, GB/s
    12.3 left arrow 8.1
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    3189 left arrow 1998

AMD R538G1601U2S 8GB RAM comparisons

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
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