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AMD R538G1601U2S 8GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Compare
AMD R538G1601U2S 8GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Overall score
AMD R538G1601U2S 8GB
Overall score
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
AMD R538G1601U2S 8GB
Report a bug
Below the latency in the PassMark tests, ns
19
31
Around 39% lower latency
Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Report a bug
Faster reading speed, GB/s
20.5
18.4
Average value in the tests
Faster write speed, GB/s
15.5
12.3
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
AMD R538G1601U2S 8GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
19
31
Read speed, GB/s
18.4
20.5
Write speed, GB/s
12.3
15.5
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
3189
3649
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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