RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Compare
ASint Technology SSA302G08-EGN1C 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Overall score
ASint Technology SSA302G08-EGN1C 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
ASint Technology SSA302G08-EGN1C 4GB
Report a bug
Faster write speed, GB/s
9.5
7.4
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
26
Around -4% lower latency
Faster reading speed, GB/s
14.2
12.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
25
Read speed, GB/s
12.6
14.2
Write speed, GB/s
9.5
7.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2174
2104
ASint Technology SSA302G08-EGN1C 4GB RAM comparisons
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB RAM comparisons
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905625-097.A00G 16GB
Kingston KHX2133C11D3/4GX 4GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
SK Hynix HYMP112S64CP6-S6 1GB
Kingston XJ69DF-MIE2 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3600C19-16GSXW 16GB
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-2133C15-8GRB 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3000C16-8GSXKB 8GB
Kingston KHX1600C9S3L/4G 4GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-3200C14-16GTZKY 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905743-034.A00G 8GB
AMD R5S38G1601U2S 8GB
Apacer Technology 78.CAGPE.AUF0B 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4D26BFSB.16FBD2 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
Kingston 99U5584-005.A00LF 4GB
Golden Empire CL16-18-18 D4-3000 16GB
Report a bug
×
Bug description
Source link