RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Compare
ASint Technology SSA302G08-EGN1C 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Overall score
ASint Technology SSA302G08-EGN1C 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
ASint Technology SSA302G08-EGN1C 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
27
Around 4% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Report a bug
Faster reading speed, GB/s
15.3
12.6
Average value in the tests
Faster write speed, GB/s
11.2
9.5
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
27
Read speed, GB/s
12.6
15.3
Write speed, GB/s
9.5
11.2
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2174
2545
ASint Technology SSA302G08-EGN1C 4GB RAM comparisons
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB RAM comparisons
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA81GS6JJR8N-VK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Transcend Information JM3200HSE-32G 32GB
Samsung M471A2G43AB2-CWE 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Crucial Technology CT51264BA160B.C16F 4GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMR64GX4M8C3200C16 8GB
Samsung M378B5173BH0-CH9 4GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9905701-032.A00G 16GB
Kingston KHX2133C11D3/4GX 4GB
Samsung M391A1K43BB2-CTD 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
Crucial Technology CT51264BA1339.C16F 4GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
Qimonda 64T128020EDL2.5C2 1GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Report a bug
×
Bug description
Source link