RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-EGN1C 4GB
Samsung M393A1G43DB1-CRC 8GB
Compare
ASint Technology SSA302G08-EGN1C 4GB vs Samsung M393A1G43DB1-CRC 8GB
Overall score
ASint Technology SSA302G08-EGN1C 4GB
Overall score
Samsung M393A1G43DB1-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
ASint Technology SSA302G08-EGN1C 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
32
Around 19% lower latency
Faster reading speed, GB/s
12.6
10.8
Average value in the tests
Faster write speed, GB/s
9.5
8.5
Average value in the tests
Reasons to consider
Samsung M393A1G43DB1-CRC 8GB
Report a bug
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
ASint Technology SSA302G08-EGN1C 4GB
Samsung M393A1G43DB1-CRC 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
32
Read speed, GB/s
12.6
10.8
Write speed, GB/s
9.5
8.5
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2174
2349
ASint Technology SSA302G08-EGN1C 4GB RAM comparisons
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Samsung M393A1G43DB1-CRC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C16-16GTZR 16GB
ASint Technology SSA302G08-EGN1C 4GB
Samsung M393A1G43DB1-CRC 8GB
AMD AE34G2139U2 4GB
Corsair CMD16GX4M2E4000C19 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2400C14-16GRK 16GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3600C16-16GTZR 16GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-3200C14-8GTZ 8GB
Kingston 9905584-016.A00LF 4GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
Kingston KHX2666C13/8GX 8GB
Kingston 9965516-430.A00G 16GB
Kingston HP37D4U1S8ME-8X 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3466C16-8GVK 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-3200C16-8GVSB 8GB
PUSKILL DDR3 1600 8G 8GB
Samsung M471A5244CB0-CWE 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Samsung M471A1K1KBB1-CRC 8GB
Report a bug
×
Bug description
Source link