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Corsair CM2X1024-6400C4 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Compare
Corsair CM2X1024-6400C4 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Overall score
Corsair CM2X1024-6400C4 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CM2X1024-6400C4 1GB
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Faster reading speed, GB/s
4
20.4
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
54
Around -200% lower latency
Faster write speed, GB/s
18.1
1,973.5
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CM2X1024-6400C4 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
18
Read speed, GB/s
4,967.4
20.4
Write speed, GB/s
1,973.5
18.1
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
776
3529
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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