RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Corsair CMY8GX3M2A2666C10 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Compare
Corsair CMY8GX3M2A2666C10 4GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Overall score
Corsair CMY8GX3M2A2666C10 4GB
Overall score
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
Report a bug
Below the latency in the PassMark tests, ns
17
50
Around 66% lower latency
Faster reading speed, GB/s
22.8
12.5
Average value in the tests
Faster write speed, GB/s
15.4
7.3
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Report a bug
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
17
50
Read speed, GB/s
22.8
12.5
Write speed, GB/s
15.4
7.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
3391
2326
Corsair CMY8GX3M2A2666C10 4GB RAM comparisons
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMH32GX4M2D3600C18 16GB
Corsair CMY8GX3M2A2666C10 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3600C16-8GTZSW 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Samsung M391A1G43DB0-CPB 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Samsung M378B5673FH0-CH9 2GB
SK Hynix GKE800SO51208-2133AH 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Panram International Corporation W4U2666PS-8GC19 8GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3000C14-16GTZR 16GB
Kingston KHX1866C10D3/4G 4GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
Nanya Technology M2S4G64CB8HG5N-CG 4GB
Micron Technology 16GB 2133MHz DIMM 16GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3000C15-8GVR 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston HP26D4S9D8MJ-16 16GB
Report a bug
×
Bug description
Source link