RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Corsair CMZ32GX3M4A1866C9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Compare
Corsair CMZ32GX3M4A1866C9 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Overall score
Corsair CMZ32GX3M4A1866C9 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMZ32GX3M4A1866C9 8GB
Report a bug
Below the latency in the PassMark tests, ns
35
37
Around 5% lower latency
Faster reading speed, GB/s
13.9
9.5
Average value in the tests
Faster write speed, GB/s
10.1
7.7
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Report a bug
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMZ32GX3M4A1866C9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
35
37
Read speed, GB/s
13.9
9.5
Write speed, GB/s
10.1
7.7
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2696
1949
Corsair CMZ32GX3M4A1866C9 8GB RAM comparisons
A-DATA Technology AD5U48008G-B 8GB
Samsung M471B1B1B1B1B1K0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CMN16GX4M2Z3200C16 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3600C16-8GVKC 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMD16GX4M2B3200C16 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMR64GX4M4C3466C16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
Kingston 9905403-038.A00LF 4GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-2133C15-16GFX 16GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 16HTF25664HZ-800E1 2GB
Kingston KVR533D2N4 512MB
Kingston 9965604-016.C01G 8GB
Samsung M393B2G70BH0-CH9 16GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Kingston 99U5474-022.A00LF 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Report a bug
×
Bug description
Source link