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Crucial Technology CT25664BA160B.C16F 2GB
Kllisre 99P54280002.A00LF 8GB

Crucial Technology CT25664BA160B.C16F 2GB vs Kllisre 99P54280002.A00LF 8GB

Overall score
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Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Overall score
star star star star star
Kllisre 99P54280002.A00LF 8GB

Kllisre 99P54280002.A00LF 8GB

Differences Specifications Comments

Differences

Crucial Technology CT25664BA160B.C16F 2GB Reasons to consider
Crucial Technology CT25664BA160B.C16F 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 47
    Around 38% lower latency
  • Faster reading speed, GB/s
    14.3 left arrow 11.2
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 8.4
    Average value in the tests
Kllisre 99P54280002.A00LF 8GB Reasons to consider
Kllisre 99P54280002.A00LF 8GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Crucial Technology CT25664BA160B.C16F 2GB
Kllisre 99P54280002.A00LF 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    29 left arrow 47
  • Read speed, GB/s
    14.3 left arrow 11.2
  • Write speed, GB/s
    10.1 left arrow 8.4
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2227 left arrow 2362

Crucial Technology CT25664BA160B.C16F 2GB RAM comparisons

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Kllisre 99P54280002.A00LF 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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