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Crucial Technology CT25664BA160B.C16F 2GB
Kllisre 99P54280002.A00LF 8GB

Crucial Technology CT25664BA160B.C16F 2GB vs Kllisre 99P54280002.A00LF 8GB

总分
star star star star star
Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分
star star star star star
Kllisre 99P54280002.A00LF 8GB

Kllisre 99P54280002.A00LF 8GB

差异 规格 评论

差异

Crucial Technology CT25664BA160B.C16F 2GB 需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 47
    左右 38% 更低的延时
  • 更快的读取速度，GB/s
    14.3 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 8.4
    测试中的平均数值
Kllisre 99P54280002.A00LF 8GB 需要考虑的原因
Kllisre 99P54280002.A00LF 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Kllisre 99P54280002.A00LF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 47
  • 读取速度，GB/s
    14.3 left arrow 11.2
  • 写入速度，GB/s
    10.1 left arrow 8.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2227 left arrow 2362

Crucial Technology CT25664BA160B.C16F 2GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Kllisre 99P54280002.A00LF 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
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SK Hynix HMT351S6CFR8C-PB 4GB
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Kingston KH2400C15D4/8 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
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Corsair CMY8GX3M2A2666C10 4GB
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Crucial Technology BL16G36C16U4W.M8FB1 16GB
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内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Kllisre 99P54280002.A00LF 8GB
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内存RAM
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Kingston 9905471-001.A01LF 2GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
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内存RAM
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Kingston 9965433-034.A00LF 4GB
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内存RAM
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内存RAM
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Smart Modular SH564128FH8NZQNSCG 4GB
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内存RAM