RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.D16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Compare
Crucial Technology CT51264BA1339.D16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Overall score
Crucial Technology CT51264BA1339.D16F 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BA1339.D16F 4GB
Report a bug
Faster reading speed, GB/s
13.2
11.1
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
39
Around -15% lower latency
Faster write speed, GB/s
9.5
8.2
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BA1339.D16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
34
Read speed, GB/s
13.2
11.1
Write speed, GB/s
8.2
9.5
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2165
2319
Crucial Technology CT51264BA1339.D16F 4GB RAM comparisons
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB RAM comparisons
Samsung M378A1K43BB1-CPB 8GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BA1339.D16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kllisre 99P5428-002.A00LF 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Transcend Information AQD-SD4U8GE21-SG 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Panram International Corporation M424016 4GB
SK Hynix HMT42GR7AFR4A-PB 16GB
G Skill Intl F4-2666C16-4GRB 4GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Samsung M378B5273CH0-CH9 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Samsung M393B1K70CH0-CH9 8GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Kingston 9905403-061.A00LF 2GB
Corsair CMK16GX4M4B3866C18 4GB
Kingston HX318C10FK/4 4GB
Kingston 9965662-009.A00G 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Report a bug
×
Bug description
Source link