RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA160B.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
Compare
Crucial Technology CT51264BA160B.C16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
Overall score
Crucial Technology CT51264BA160B.C16F 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BA160B.C16F 4GB
Report a bug
Faster reading speed, GB/s
14.3
13.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
41
Around -41% lower latency
Faster write speed, GB/s
11.0
9.4
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BA160B.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
41
29
Read speed, GB/s
14.3
13.8
Write speed, GB/s
9.4
11.0
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2142
2690
Crucial Technology CT51264BA160B.C16F 4GB RAM comparisons
SK Hynix HMT351U6CFR8C-PB 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB RAM comparisons
Samsung M323R2GA3BB0-CQKOD 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT16GX4M2K4000C19 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
Kingston 9905471-006.A01LF 4GB
Corsair CMD16GX4M2B3200C16 8GB
Kingston 99U5428-063.A00LF 8GB
Corsair CMK16GX4M2D2400C14 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston X6TCK6-MIE 32GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3600C16-32GVK 32GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston ACR26D4S9S1ME-4 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMWB8G1L2666A16W4 8GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-3600C17-8GTRS 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C14-16GVR 16GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2400C16-8GFX 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Report a bug
×
Bug description
Source link